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| (R) BAS70-07 SMALL SIGNAL SCHOTTKY DIODE FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE EXTREMELY FAST SWITCHING SURFACE MOUNTED DEVICE DESCRIPTION Low turn-on and high breakdown voltage diodes intended for ultrafast switching and UHF detectors in hybrid micro circuits. Packaged in SOT-143, this device is intended for surface mounting. Its dual independent diodes configuration makes it very interesting for applications where high integration is searched. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF IFSM Ptot Tstg Tj TL Parameter Repetitive peak reverse voltage Continuous forward current Surge non repetitive forward current Power Dissipation (note 1) Storage temperature range Maximum operating junction temperature * Maximum temperature for soldering during 10s tp = 10ms Tamb = 25C Value 70 15 1 310 - 65 to +150 150 260 Unit V mA A mW C C C A2 A1 K2 K1 A1 A2 K1 K2 SOT-143 Note 1: Ptot is the total dissipation of both diodes. *: dPtot 1 < thermal runaway condition for a diode on its own heatsink Rth(j-a) dTj THERMAL RESISTANCE Symbol Rth (j-a) Junction to ambient (*) Parameter Value 400 Unit C/W (*) Mounted on epoxy board with recommended pad layout. June 1999 - Ed: 2A 1/4 BAS70-07 STATIC ELECTRICAL CHARACTERISTICS Symbol VF * Tests Conditions Forward voltage drop Tests Conditions Tj = 25C IF = 1 mA IF = 10 mA IF = 15 mA VBR IR ** Breakdown voltage Reverse leakage current Tj = 25C Tj = 25C IR = 10 A VR = 50 V VR = 70 V Pulse test: * tp = 380 s, < 2% ** tp = 5 ms, < 2% Min. Typ. Max. 410 750 1 Unit mV mV V V 70 200 10 nA A DYNAMIC CHARACTERISTICS (Tj = 25 C) Symbol C trr Parameters Junction capacitance Reverse recovery time Effective carrier lifetime Tests Conditions VR = 1 V IF = 10 mA IR = 10 mA F = 1 MHz Irr = 1 mA RL = 100 Min. Typ. Max. 2 5 100 Unit pF ns ps IF = 5 mA Krakauer method Fig.1 : Average forward power dissipation versus average forward current. PF(av)(W) 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 Fig.2 : Continuous forward current versus ambient temperature. IF(mA) 80 = 0.1 = 0.05 = 0.2 = 0.5 70 60 =1 50 40 30 T 20 tp IF(av) (mA) 0 10 20 30 40 50 =tp/T 10 Tamb(C) 0 25 50 75 100 125 150 60 70 80 0 2/4 BAS70-07 Fig.3 : Non repetitive surge peak forward current versus overload duration (maximum values). Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration (alumine substrate 10mm x 8mm x 0.5mm). Zth(j-a)/Rth(j-a) 1.00 Ta=25C IM(A) 0.30 0.25 Ta=50C = 0.5 0.20 0.15 0.10 IM = 0.2 0.10 Ta=100C = 0.1 T Single pulse t 0.05 0.00 1E-3 =0.5 t(s) 1E-2 1E-1 1E+0 tp(s) 0.01 1E-3 1E-2 1E-1 1E+0 =tp/T tp 1E+1 1E+2 Fig.5 : Reverse leakage current versus reverse voltage applied (typical values). IR(A) Tj=100C Fig.6 : Reverse leakage current versus junction temperature (typical values). IR(A) VR=70V 1E+1 1E+0 1E-1 1E+2 1E+1 1E+0 Tj=25C 1E-2 VR(V) 1E-3 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 1E-1 Tj(C) 1E-2 0 25 50 75 100 125 Fig.7 : Junction capacitance versus reverse voltage applied (typical values). C(pF) F=1MHz Tj=25C Fig.8 : Forward voltage drop versus forward current. 7E-2 IFM(A) Tj=100C Typical values 2.0 1.0 1E-2 Tj=25C Maximum values 1E-3 Tj=25C Typical values VR(V) 0.1 1 10 100 VFM(V) 1E-4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 3/4 BAS70-07 PACKAGE MECHANICAL DATA SOT-143 DIMENSIONS D e1 C REF. A Millimeters Min. 0.8 0.01 0.35 0.55 0.085 2.8 1.2 Max. 1.2 0.127 0.6 0.95 0.2 3.04 1.4 Inches Min. 0.0004 0.014 0.022 0.003 0.11 0.047 Max. 0.005 0.024 0.037 0.008 0.12 0.055 0.0314 0.0472 H E L A1 b b1 e2 b1 b C D E e1 A 1.90 Typ. 0.2 Typ. 2.1 2.64 0.55 Typ. 0.075 Typ. 0.008 Typ. 0.083 0.103 0.022 Typ. e2 H L A1 FOOTPRINT DIMENSIONS (millimeters) 1.92 0.95 0.2 2.25 1.1 0.65 MARKING Type BAS70-07 Marking D99 Package SOT-143 Weight 0.01g. Base qty 3000 Delivery mode Tape & reel Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4 |
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